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| PR OFETTM + 12V BTS5180-2EKA Smart High-Side Power Switch Dual Channel, 180m Data Sheet Rev. 2.0, 2010-08-02 Automotive Power BTS5180-2EKA Table of Contents Table of Contents 1 2 3 3.1 3.2 3.3 4 4.1 4.2 4.3 4.3.1 4.3.2 5 5.1 5.2 5.3 5.3.1 5.3.2 5.4 5.5 6 6.1 6.2 6.3 6.4 6.5 6.5.1 6.5.2 6.5.3 6.6 7 7.1 7.2 7.3 7.3.1 7.3.2 7.3.3 7.3.3.1 7.3.3.2 7.3.3.3 7.3.4 7.3.5 7.3.6 7.4 8 8.1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Voltage and Current Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 7 7 8 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 PCB set up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output ON-state Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Turn ON/OFF Characteristics with Resistive Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Inductive Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output Clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Load Inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Inverse Current Capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Undervoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Overvoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Overload Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Current Limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Temperature Limitation in the Power DMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Short Circuit Appearance with Channel in Parallel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics for the Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Diagnostic Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SENSE Signal in Different Operating Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SENSE Signal in the Nominal Current Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SENSE Signal Variation as a Function of Temperature and Load Current . . . . . . . . . . . . . . . . . . . SENSE Signal Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SENSE Signal in Open Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Open Load in ON Diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Open Load in OFF Diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Open Load Diagnostic Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SENSE Signal with OUT in Short Circuit to VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SENSE Signal in Case of Overload . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SENSE Signal in Case of Inverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics Diagnostic Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 15 15 16 16 17 17 19 21 21 21 22 23 23 23 24 25 26 27 27 28 29 29 30 31 31 31 32 33 33 33 34 Input Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 Input Circuitry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 2 Rev. 2.0, 2010-08-02 Data Sheet PROFETTM+ 12V BTS5180-2EKA Table of Contents 8.2 8.3 8.4 9 9.1 9.1.1 9.1.2 9.1.3 9.1.4 9.1.5 9.2 9.2.1 9.2.2 9.2.3 9.2.4 9.2.5 9.2.6 9.2.7 9.2.8 9.2.9 9.3 9.3.1 9.3.2 9.4 9.4.1 9.4.2 9.4.3 9.4.4 9.5 9.5.1 9.5.2 9.5.3 9.5.4 10 10.1 11 12 DEN / DSEL Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 Input Pin Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 Characterization Results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Minimum Functional Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Undervoltage Shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Current Consumption One Channel active . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Current Consumption Two Channels active . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Standby Current for Whole Device with Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output Voltage Drop Limitation at Low Load Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Drain to Source Clamp Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Slew Rate at Turn ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Slew Rate at Turn OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Turn ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Turn OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Turn ON / OFF matching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Switch ON Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Switch OFF Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Overload Condition in the Low Voltage Area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Overload Condition in the High Voltage Area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Diagnostic Mechanism . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Current Sense at no Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Open Load Detection Threshold in ON State . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Sense Signal Maximum Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Sense Signal maximum Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input Voltage Threshold ON to OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input Voltage Threshold OFF to ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input Voltage Hysteresis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input Current High Level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 39 39 39 40 40 40 41 41 41 42 42 42 43 43 44 44 45 45 45 46 46 46 47 47 48 48 48 49 49 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 Further Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 Data Sheet PROFETTM+ 12V 3 Rev. 2.0, 2010-08-02 Smart High-Side Power Switch BTS5180-2EKA 1 Application * * * Overview Suitable for resistive, inductive and capacitive loads Replaces electromechanical relays, fuses and discrete circuits Most suitable for loads with high inrush current, such as lamps Basic Features * * * * * * * * * Two channel device Very low stand-by current 3.3 V and 5 V compatible logic inputs Electrostatic discharge protection (ESD) Optimized electromagnetic compatibility Logic ground independent from load ground Very low power DMOS leakage current in OFF state Green product (RoHS compliant) AEC qualified PG-DSO-14-40 EP Description The BTS5180-2EKA is a 180 m dual channel Smart High-Side Power Switch, embedded in a PG-DSO-14-40 EP, Exposed Pad package, providing protective functions and diagnosis. The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 technology. It is specially designed to drive lamps up to 1 * 5W, as well as LEDs in the harsh automotive environment. Table 1 Parameter Operating voltage range Maximum supply voltage Maximum ON state resistance at TJ = 150 C per channel Nominal load current (one channel active) Nominal load current (both channels active) Typical current sense ratio Minimum current limitation Maximum standby current with load at TJ = 25 C Product Summary Symbol Value 5 V ... 28 V 41 V 360 m 2A 1.5 A 550 8A 500 nA VS(OP) VS(LD) RDS(ON) IL(NOM)1 IL(NOM)2 kILIS IL5(SC) IS(OFF) Type BTS5180-2EKA Data Sheet PROFETTM+ 12V Package PG-DSO-14-40 EP 4 Marking BTS5180-2EKA Rev. 2.0, 2010-08-02 BTS5180-2EKA Overview Diagnostic Functions * * * * * * Proportional load current sense for both channels multiplexed Open load in ON and OFF Short circuit to battery and ground Overtemperature Stable diagnostic signal during short circuit Enhanced kILIS dependency with temperature and load current Protection Functions * * * * * * * Stable behavior during undervoltage Reverse polarity protection with external components Secure load turn-off during logic ground disconnect with external components Overtemperature protection with restart Overvoltage protection with external components Voltage dependent current limitation Enhanced short circuit operation Data Sheet PROFETTM+ 12V 5 Rev. 2.0, 2010-08-02 BTS5180-2EKA Block Diagram 2 Block Diagram Channel 0 voltage sensor over temperature driver logic ESD protection gate control & charge pump T clamp for inductive load over current switch limit VS internal power supply IN0 DEN IS load current sense and open load detection forward voltage drop detection VS OUT 0 Channel 1 T IN1 DSEL Control and protection circuit equivalent to channel 0 OUT 1 GND Block diagram DxS.vsd Figure 1 Block Diagram for the BTS5180-2EKA Data Sheet PROFETTM+ 12V 6 Rev. 2.0, 2010-08-02 BTS5180-2EKA Pin Configuration 3 3.1 Pin Configuration Pin Assignment GND IN0 DEN IS DSEL IN1 NC 1 2 3 4 5 6 7 14 13 12 11 10 9 8 OUT0 OUT0 OUT0 NC OUT1 OUT1 OUT1 Pinout dual SO14 .vsd Figure 2 Pin Configuration 3.2 Pin Definitions and Functions Pin 1 2 3 4 5 6 7, 11 8, 9, 10 12, 13, 14 Cooling Tab Symbol GND IN0 DEN IS DSEL IN1 NC OUT1 OUT0 Function GrouND; Ground connection INput channel 0; Input signal for channel 0 activation Diagnostic ENable; Digital signal to enable/disable the diagnosis of the device Sense; Sense current of the selected channel Diagnostic SELection; Digital signal to select the channel to be diagnosed INput channel 1; Input signal for channel 1 activation Not Connected; No internal connection to the chip OUTput 1; Protected high side power output channel 11) OUTput 0; Protected high side power output channel 01) Voltage Supply; Battery voltage VS 1) All output pins of a given channel must be connected together on the PCB. All pins of an output are internally connected together. PCB traces have to be designed to withstand the maximum current which can flow. Data Sheet PROFETTM+ 12V 7 Rev. 2.0, 2010-08-02 BTS5180-2EKA Pin Configuration 3.3 Voltage and Current Definition Figure 3 shows all terms used in this data sheet, with associated convention for positive values. VS I IN0 VIN0 VIN1 I DEN VDEN IDSEL VDSEL IIS IS VIS GND DEN I IN1 VS IN0 IN1 IS VDS0 I OUT0 OUT0 VOUT0 VDS1 OUT1 DSEL I OUT1 VOUT1 IGND voltage and current convention.vsd Figure 3 Voltage and Current Definition Data Sheet PROFETTM+ 12V 8 Rev. 2.0, 2010-08-02 BTS5180-2EKA General Product Characteristics 4 4.1 General Product Characteristics Absolute Maximum Ratings Table 2 Parameter Absolute Maximum Ratings 1) Symbol Min. Values Typ. - - Max. 28 16 V V Unit Note / Test Condition - Number TJ = -40C to +150C; (unless otherwise specified) Supply Voltages Supply voltage Reverse polarity voltage VS -VS(REV) -0.3 0 P_4.1.1 P_4.1.2 Supply voltage for short circuit protection VBAT(SC) 0 - 24 V t < 2 min TA = 25 C RL 12 RGND = 150 2) RECU = 20 m RCable= 16 m/m LCable= 1 H/m, l = 0 or 5 m See Chapter 6 and Figure 53 P_4.1.3 Supply voltage for Load dump VS(LD) protection Short Circuit Capability Permanent short circuit IN pin toggles Input Pins Voltage at INPUT pins Current through INPUT pins Voltage at DEN pin Current through DEN pin Voltage at DSEL pin Current through DSEL pin Sense Pin Voltage at IS pin Current through IS pin Power Stage Load current Power dissipation (DC) | IL | - - 41 V 3) RL = 12 100 - - k cycle V mA V mA V mA V mA A W 2) RI = 2 P_4.1.12 nRSC1 100 ppm tON = 300ms - P_4.1.4 VIN IIN VDEN IDEN VDSEL IDSEL VIS IIS -0.3 - -2 -0.3 - -2 -0.3 - -2 -0.3 -25 - - - - - - - - - - - - 6 7 2 6 7 2 6 7 2 P_4.1.13 P_4.1.14 P_4.1.15 P_4.1.16 P_4.1.17 P_4.1.18 P_4.1.19 P_4.1.20 P_4.1.21 P_4.1.22 t < 2 min - - t < 2 min - - t < 2 min - - - - VS 50 IL(LIM) 1.6 PTOT TA = 85 C TJ < 150 C Data Sheet PROFETTM+ 12V 9 Rev. 2.0, 2010-08-02 BTS5180-2EKA General Product Characteristics Table 2 Parameter Absolute Maximum Ratings (cont'd)1) Symbol Min. Maximum energy dissipation EAS Single pulse (one channel) Voltage at power transistor Currents Current through ground pin Temperatures Junction temperature Storage temperature ESD Susceptibility ESD susceptibility (all pins) ESD susceptibility OUT Pin vs. GND and VS connected ESD susceptibility ESD susceptibility pin (corner pins) 1) 2) 3) 4) 5) TJ = -40C to +150C; (unless otherwise specified) Values Typ. - Max. 30 mJ - Unit Note / Test Condition Number P_4.1.23 IL(0) = 1 A TJ(0) = 150 C VS = 13.5 V - - VDS I GND - -10 -150 -40 -55 -2 -4 -500 -750 - - 41 10 20 150 150 2 4 500 750 V mA P_4.1.26 P_4.1.27 t < 2 min C C kV kV V V - - 4) 4) TJ TSTG VESD VESD VESD VESD - - - - - - P_4.1.28 P_4.1.30 HBM HBM CDM CDM P_4.1.31 P_4.1.32 P_4.1.33 P_4.1.34 5) 5) Not subject to production test. Specified by design. Hardware set-up in accordance to AEC Q100-012 and AEC Q101-006. VS(LD) is setup without the DUT connected to the generator per ISO 7637-1. ESD susceptibility HBM according to EIA/JESD 22-A 114B. "CDM" EIA/JESD22-C101 or ESDA STM5.3.1 Notes 1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. Data Sheet PROFETTM+ 12V 10 Rev. 2.0, 2010-08-02 BTS5180-2EKA General Product Characteristics 4.2 Functional Range Table 3 Parameter Functional Range TJ = -40C to +150C; (unless otherwise specified) Symbol Min. Values Typ. 13.5 - Max. 18 28 V V 8 5 Unit Note / Test Condition - 2) Number P_4.2.1 Nominal operating voltage Extended operating voltage VNOM VS(OP) RL = 12 VDS < 0.5 V 3.8 4.3 5 V 1) VIN = 4.5 V P_4.2.2 See Figure 15 Minimum functional supply voltage VS(OP)_MIN VIN = 4.5 V RL = 12 From IOUT = 0 A to P_4.2.3 VDS < 0.5 V; See Figure 15 See Figure 29 Undervoltage shutdown 1) VS(UV) 3 3.5 4.1 V VDEN = 0 V RL = 12 From VDS < 1 V; to IOUT = 0 A See Figure 15 See Figure 30 VIN = 4.5 V P_4.2.4 Undervoltage shutdown hysteresis Operating current One channel active VS(UV)_HYS IGND_1 - - 850 3.5 - 6 mV mA 2) - P_4.2.13 P_4.2.5 VIN = 5.5 V VDEN = 5.5 V Device in RDS(ON) VS = 18 V See Figure 31 Operating current All channels active IGND_2 - 5 8 mA VIN = 5.5 V P_4.2.6 VDEN = 5.5 V Device in RDS(ON) VS = 18 V See Figure 32 1) Standby current for whole device with load (ambiente) IS(OFF) - 0.1 0.5 A VS = 18 V VOUT = 0 V VIN floating VDEN floating TJ 85 C See Figure 33 P_4.2.7 Data Sheet PROFETTM+ 12V 11 Rev. 2.0, 2010-08-02 BTS5180-2EKA General Product Characteristics Table 3 Parameter Functional Range (cont'd)TJ = -40C to +150C; (unless otherwise specified) Symbol Min. Maximum standby current for IS(OFF)_150 whole device with load - Values Typ. 2 Max. 20 A Unit Note / Test Condition Number P_4.2.10 VS = 18 V VOUT = 0 V VIN floating VDEN floating TJ = 150 C See Figure 33 2) Standby current for whole device with load, diagnostic active IS(OFF_DEN) - 0.6 - mA VS = 18 V VOUT = 0 V VIN floating VDEN = 5.5 V P_4.2.8 1) Test at TJ = -40C only 2) Not subject to production test. Specified by design. Note: Within the functional range the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the related electrical characteristics table. 4.3 Thermal Resistance Table 4 Parameter Thermal Resistance Symbol Min. Values Typ. 5 40 Max. - - K/W K/W - - Unit Note / Test Condition 1) 1) 2) Number P_4.3.1 P_4.3.2 Junction to soldering point Junction to ambient Both channels active RthJS RthJA 1) Not subject to production test. Specified by design. 2)Specified Rthja value is according to JEDEC JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The product (chip + package) was simulated on a 76.4 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70m Cu, 2 x 35 m Cu). Where applicable, a thermal via array under the exposed pad contacts the first inner copper layer. Please refer to Figure 4 and Figure 5. 4.3.1 PCB set up 70m 1.5mm 35m 0.3mm PCB 2s2p.vsd Figure 4 2s2p PCB Cross Section 12 Rev. 2.0, 2010-08-02 Data Sheet PROFETTM+ 12V BTS5180-2EKA General Product Characteristics PCB bottom view PCB top view 1 14 2 13 3 COOLING TAB VS 5 12 4 11 10 6 9 7 thermique SO14.vsd 8 Figure 5 PC Board Top and Bottom View for Thermal Simulation with 600 mm Cooling Area 4.3.2 Thermal Impedance 100 10 Zth-JA [K/W] 1 2s2p 1s0p - 600 mm 1s0p - 300 mm 1s0p - footprint 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 time [sec] Figure 6 Typical Thermal Impedance. PCB set up according Figure 5 13 Rev. 2.0, 2010-08-02 Data Sheet PROFETTM+ 12V BTS5180-2EKA General Product Characteristics 100 90 80 Rthja [K/W] 70 60 1s0p 50 40 30 0 100 200 300 400 500 600 700 footprint Area [mm2] Figure 7 Typical Thermal Resistance. PCB set up 1s0p Data Sheet PROFETTM+ 12V 14 Rev. 2.0, 2010-08-02 BTS5180-2EKA Power Stage 5 5.1 Power Stage Output ON-state Resistance The power stages are built using an N-channel vertical power MOSFET (DMOS) with charge pump. The ON-state resistance RDS(ON) depends on the supply voltage as well as the junction temperature TJ. Figure 8 shows the dependencies in terms of temperature and supply voltage for the typical ON-state resistance. The behavior in reverse polarity is described in Chapter 6.4. 360 340 320 300 280 260 240 220 200 180 160 140 120 100 -40 -10 20 50 80 Junction Temperature (Tj) 110 140 300 250 200 RDS(ON)(m ) 150 100 50 0 0 3 6 9 12 Supply Voltage VS (V) 15 18 RDS(ON)(m ) Rdson_180.vsd Figure 8 Typical ON-state Resistance A high signal at the input pin (see Chapter 8) causes the power DMOS to switch ON with a dedicated slope, which is optimized in terms of EMC emission. 5.2 Turn ON/OFF Characteristics with Resistive Load Figure 9 shows the typical timing when switching a resistive load. IN VIN_H VIN_L VOUT 90% VS 70% VS 30% VS 10% VS t ON tOFF_DELAY dV/dt ON dV/dt OFF t tON_DELAY tOFF t Switching times.vsd Figure 9 Switching a Resistive Load Timing Data Sheet PROFETTM+ 12V 15 Rev. 2.0, 2010-08-02 BTS5180-2EKA Power Stage 5.3 Inductive Load 5.3.1 Output Clamping When switching OFF inductive loads with high side switches, the voltage VOUT drops below ground potential, because the inductance intends to continue driving the current. To prevent the destruction of the device by avalanche due to high voltages, there is a voltage clamp mechanism ZDS(AZ) implemented that limits negative output voltage to a certain level (VS - VDS(AZ)). Please refer to Figure 10 and Figure 11 for details. Nevertheless, the maximum allowed load inductance is limited. VS ZDS(AZ) VDS LOGIC VBAT GND VIN ZGND OUT VOUT L, RL IL IN Output clamp.svg Figure 10 Output Clamp (OUT0 and OUT1) IN t V OUT VS t V S-VDS(AZ) IL t Switching an inductance.vsd Figure 11 Switching an Inductive Load Timing Data Sheet PROFETTM+ 12V 16 Rev. 2.0, 2010-08-02 BTS5180-2EKA Power Stage 5.3.2 Maximum Load Inductance During demagnetization of inductive loads, energy has to be dissipated in the BTS5180-2EKA. This energy can be calculated with following equation: RL x IL L- V S - V DS ( AZ ) E = V DS ( AZ ) x ----- x -------------------------------- x ln 1 - -------------------------------- + I L RL RL V S - V DS ( AZ ) Following equation simplifies under the assumption of RL = 0 . (1) VS 2 1 E = -- x L x I x 1 - -------------------------------- 2 V S - V DS ( AZ ) (2) The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 12 for the maximum allowed energy dissipation as a function of the load current. 1000 100 E AS [mJ] 10 1 0 1 2 3 EAS180.vsd I L [A] Figure 12 Maximum Energy Dissipation Single Pulse, TJ(0) = 150 C; VS = 13.5V 5.4 Inverse Current Capability In case of inverse current, meaning a voltage VINV at the OUTput higher than the supply voltage VS, a current IINV will flow from output to VS pin via the body diode of the power transistor (please refer to Figure 13). The output stage follows the state of the IN pin, except if the IN pin goes from OFF to ON during inverse. In that particular case, the output stage is kept OFF until the inverse current disappears. Nevertheless, the current IINV should not be higher than IL(INV). Otherwise, the second channel can be corrupted and erratic behavior can be observed. If the affected channel is OFF, the diagnostic will detect an open load at OFF. If the affected channel is ON, the diagnostic will detect open load at ON (the overtemperature signal is inhibited). At the appearance of VINV, a parasitic diagnostic can be observed at the unaffected channel. After, the diagnosis is valid and reflects the output state. At VINV vanishing, the diagnosis is valid and reflects the output state. During inverse current, no protection function are available. Data Sheet PROFETTM+ 12V 17 Rev. 2.0, 2010-08-02 BTS5180-2EKA Power Stage VBAT VS Gate driver Device logic OL comp. INV Comp. IL(INV) OUT VINV GND ZGND inverse current.svg Figure 13 Inverse Current Circuitry Data Sheet PROFETTM+ 12V 18 Rev. 2.0, 2010-08-02 BTS5180-2EKA Power Stage 5.5 Electrical Characteristics Power Stage Table 5 Electrical Characteristics: Power Stage VS = 8 V to 18 V, TJ = -40C to +150C (unless otherwise specified). Typical values are given at VS = 13.5 V, TJ = 25 C Parameter ON-state resistance per channel Symbol Min. Values Typ. 330 Max. 360 m 180 Unit Note / Test Condition Number P_5.5.1 RDS(ON)_150 IL = IL4 = 2 A VIN = 4.5 V TJ = 150 C See Figure 8 1) ON-state resistance per channel Nominal load current One channel active Nominal load current All channel active RDS(ON)_25 IL(NOM)1 IL(NOM)2 - - - - 41 180 2 1.5 10 47 - - - 25 53 m A A mV V TJ = 25 C TA = 85 C P_5.5.21 P_5.5.2 P_5.5.3 1) TJ < 150 C Output voltage drop limitation VDS(NL) at small load currents Drain to source clamping voltage VDS(AZ) = [VS - VOUT] Output leakage current per channel; TJ 85 C Output leakage current per channel; TJ = 150 C Inverse current capability Slew rate 30% to 70% VS Slew rate 70% to 30% VS Slew rate matching dV/dtON - dV/dtOFF IL = IL0 = 30 mA See Figure 34 P_5.5.4 P_5.5.5 VDS(AZ) IDS = 20 mA See Figure 11 See Figure 35 2) IL(OFF) - 0.1 0.5 A IL(OFF)_150 - 1 10 A IL(INV) dV/dtON -dV/dtOFF dV/dt - 0.1 0.1 -0.15 30 30 -50 10 10 1.5 0.25 0.25 0 100 100 0 35 35 - 0.5 0.5 0.15 230 230 50 100 100 A V/s V/s V/s s s s s s VIN floating VOUT = 0 V TJ 85 C VIN floating VOUT = 0 V TJ = 150 C 1) VS < VOUTx RL = 12 VS = 13.5 V See Figure 9 See Figure 36 See Figure 37 See Figure 38 See Figure 39 See Figure 40 P_5.5.6 P_5.5.8 P_5.5.9 P_5.5.11 P_5.5.12 P_5.5.13 P_5.5.14 P_5.5.15 P_5.5.16 P_5.5.17 P_5.5.18 VS VS Turn-ON time to VOUT = 90% tON Turn-OFF time to VOUT = 10% tOFF tSW Turn-ON / OFF matching tOFF - tON VS VS Turn-ON time to VOUT = 10% tON_delay Turn-OFF time to VOUT = 90% tOFF_delay Data Sheet PROFETTM+ 12V 19 Rev. 2.0, 2010-08-02 BTS5180-2EKA Power Stage Table 5 Electrical Characteristics: Power Stage (cont'd) VS = 8 V to 18 V, TJ = -40C to +150C (unless otherwise specified). Typical values are given at VS = 13.5 V, TJ = 25 C Parameter Switch ON energy Symbol Min. Values Typ. 0.4 Max. - mJ - Unit Note / Test Condition 1) Number P_5.5.19 EON RL = 12 VOUT = 90% VS VS = 18 V See Figure 41 1) Switch OFF energy EOFF - 0.4 - mJ RL = 12 VOUT = 10% VS VS = 18 V See Figure 42 P_5.5.20 1) Not subject to production test, specified by design. 2) Test at TJ = -40C only Data Sheet PROFETTM+ 12V 20 Rev. 2.0, 2010-08-02 BTS5180-2EKA Protection Functions 6 Protection Functions The device provides integrated protection functions. These functions are designed to prevent the destruction of the IC from fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are designed for neither continuous nor repetitive operation. 6.1 Loss of Ground Protection In case of loss of the module ground and the load remains connected to ground, the device protects itself by automatically turning OFF (when it was previously ON) or remains OFF, regardless of the voltage applied on IN pins. In case of loss of device ground, it's recommended to use input resistors between the microcontroller and the BTS5180-2EKA to ensure switching OFF of channels. In case of loss of module or device ground, a current (IOUT(GND)) can flow out of the DMOS. Figure 14 sketches the situation. ZGND can be either resistor or diode. ZIS(AZ) VS ZD(AZ) VBAT RSENSE RDSEL RDEN RIN IS DSEL DEN INx LOGIC ZDS(AZ) IOUT(GND) OUTx ZDESD RIS GND ZGND Loss of ground protection.svg Figure 14 Loss of Ground Protection with External Components 6.2 Undervoltage Protection Between VS(UV) and VS(OP), the undervoltage mechanism is triggered. VS(OP) represents the minimum voltage where the switching ON and OFF can takes place. VS(UV) represents the minimum voltage the switch can hold ON. If the supply voltage is below the undervoltage mechanism VS(UV), the device is OFF (turns OFF). As soon as the supply voltage is above the undervoltage mechanism VS(OP), then the device can be switched ON. When the switch is ON, protection functions are operational. Nevertheless, the diagnosis is not guaranteed until VS is in the VNOM range. Figure 15 sketches the undervoltage mechanism. Data Sheet PROFETTM+ 12V 21 Rev. 2.0, 2010-08-02 BTS5180-2EKA Protection Functions VOUT undervoltage behavior .vsd VS(UV) VS(OP) VS Figure 15 Undervoltage Behavior 6.3 Overvoltage Protection There is an integrated clamp mechanism for overvoltage protection (ZD(AZ)). To guarantee this mechanism operates properly in the application, the current in the Zener diode has to be limited by a ground resistor. Figure 16 shows a typical application to withstand overvoltage issues. In case of supply voltage higher than VS(AZ), the power transistor switches ON and the voltage across the logic section is clamped. As a result, the internal ground potential rises to VS - VS(AZ). Due to the ESD Zener diodes, the potential at pin INx, DSEL and DEN rises almost to that potential, depending on the impedance of the connected circuitry. In the case the device was ON, prior to overvoltage, the BTS5180-2EKA remains ON. In the case the BTS5180-2EKA was OFF, prior to overvoltage, the power transistor can be activated. In the case the supply voltage is in above VBAT(SC) and below VDS(AZ), the output transistor is still operational and follows the input. If at least one channel is in the ON state, parameters are no longer guaranteed and lifetime is reduced compared to the nominal supply voltage range. This especially impacts the short circuit robustness, as well as the maximum energy EAS capability. ZGND as a resistor (150 ) will offer superior results compared to a diode and resistor (1 k). ISOV ZIS(AZ) IN1 RSENSE RDSEL RDEN RIN VS ZD(AZ) VBAT IS DSEL DEN INx LOGIC ZDS(AZ) Figure 16 Data Sheet PROFETTM+ 12V IN0 OUTx ZDESD RIS GND ZGND Overvoltage protection.svg Overvoltage Protection with External Components 22 Rev. 2.0, 2010-08-02 BTS5180-2EKA Protection Functions 6.4 Reverse Polarity Protection In case of reverse polarity, the intrinsic body diodes of the power DMOS causes power dissipation. The current in this intrinsic body diode is limited by the load itself. Additionally, the current into the ground path and the logic pins has to be limited to the maximum current described in Chapter 4.1 with an external resistor. Figure 17 shows a typical application. RGND resistor is used to limit the current in the Zener protection of the device. Resistors RDSEL, RDEN, and RIN are used to limit the current in the logic of the device and in the ESD protection stage. RSENSE is used to limit the current in the sense transistor which behaves as a diode. The recommended value for RDEN = RDSEL = RIN = RSENSE = 4.7 k. ZGND can be either a 150 resistor or Schottky diode with 1 k resistor in parallel. In case the overvoltage is not considered in the application, RGND can be replaced by a Schottky diode and 1k resistor in parallel. Optionally a capacitor in parallel is recommended for EMC reasons. During reverse polarity, no protection functions are available. Micro controller protection diodes R SENSE RDSEL RDEN RIN ZIS(AZ) IS DSEL DEN INx LOGIC VS ZD(AZ) ZDS(AZ) VDS(REV) -VS(REV) OUTx Figure 17 Reverse Polarity Protection with External Components 6.5 Overload Protection In case of overload, such as high inrush of cold lamp filament, or short circuit to ground, the BTS5180-2EKA offers several protection mechanisms. 6.5.1 Current Limitation At first step, the instantaneous power in the switch is maintained at a safe value by limiting the current to the maximum current allowed in the switch IL(SC). During this time, the DMOS temperature is increasing, which affects the current flowing in the DMOS. The current limitation value is VDS dependent. Figure 18 shows the behavior of the current limitation as a function of the drain to source voltage. Data Sheet PROFETTM+ 12V IN0 ZDESD GND RIS ZGND Reverse Polarity .vsd 23 Rev. 2.0, 2010-08-02 BTS5180-2EKA Protection Functions Figure 18 Current Limitation (typical behavior) 6.5.2 Temperature Limitation in the Power DMOS Each channel incorporates both an absolute (TJ(SC)) and a dynamic (TJ(SW)) temperature sensor. Activation of either sensor will cause an overheated channel to switch OFF to prevent destruction. Any protective switch OFF latches the output until the temperature has reached an acceptable value. Figure 19 gives a sketch of the situation. The TSTEP describes the device's warming, due to the overcurrent in the channel. A retry strategy is implemented such that when the DMOS temperature has cooled down enough, the switch is switched ON again, if the IN pin signal is still high (restart behavior). Data Sheet PROFETTM+ 12V 24 Rev. 2.0, 2010-08-02 BTS5180-2EKA Protection Functions IN IL LOAD CURRENT LIMITATION PHASE IL(x)SC t LOAD CURRENT BELOW LIMITATION PHASE IL(NOM) t TDMOS TJ(SW) TJ(SC) TJ(SW) TJ(SW) TA tsIS(FAULT) IIS IIS(FAULT) IL( NOM) / kILIS 0A V DEN tsIS(OFF) TSTEP tsIS(OT_blank) t t 0V t Hard start.vsd Figure 19 Overload Protection Note: For better understanding, the time scale is not linear. The real timing of this drawing is application dependant and cannot be described. 6.5.3 Short Circuit Appearance with Channel in Parallel The two channels are not synchronized in the restart event. When the two channels are in temperature limitation, the channel which has cooled down the fastest doesn't wait for the second one to be cooled down as well to restart. Thus, it is not recommended to use the device with channels in parallel. Data Sheet PROFETTM+ 12V 25 Rev. 2.0, 2010-08-02 BTS5180-2EKA Protection Functions 6.6 Electrical Characteristics for the Protection Functions Table 6 Electrical Characteristics: Protection VS = 8 V to 18 V, TJ = -40C to +150C (unless otherwise specified). Typical values are given at VS = 13.5 V, TJ = 25 C Parameter Loss of Ground Output leakage current while IOUT(GND) GND disconnected Reverse Polarity Drain source diode voltage during reverse polarity Overvoltage Overvoltage protection Overload Condition Load current limitation - 0.1 - mA Symbol Min. Values Typ. Max. Unit Note / Test Condition Number VS = 28 V See Figure 14 IL = - 1 A TJ = 150 C See Figure 17 1) 2) P_6.6.1 VDS(REV) 200 650 700 mV P_6.6.2 VS(AZ) 41 47 53 V ISOV = 5 mA See Figure 16 P_6.6.3 IL5(SC) 8 11 15 A 3) VDS = 5 V See Figure 18 and Figure 43 2) P_6.6.4 Load current limitation IL28(SC) - 4 - A VDS = 28 V See Figure 18 and Figure 44 P_6.6.7 Short circuit current during over temperature toggling Dynamic temperature increase while switching Thermal shutdown temperature IL(RMS) - 2 - A 2) VIN = 4.5 V RSHORT = 100 m LSHORT = 5 H 4) P_6.6.12 TJ(SW) - 150 80 170 4) 20 - 200 4) - K C K See Figure 19 See Figure 19 See Figure 19 P_6.6.8 P_6.6.10 P_6.6.11 TJ(SC) 5) Thermal shutdown hysteresis TJ(SC) - 1) All pins are disconnected except VS and OUT. 2) 3) 4) 5) Not Subject to production test, specified by design Test at TJ = -40C only Functional test only Test at TJ = +150C only 5) 4) Data Sheet PROFETTM+ 12V 26 Rev. 2.0, 2010-08-02 BTS5180-2EKA Diagnostic Functions 7 Diagnostic Functions For diagnosis purpose, the BTS5180-2EKA provides a combination of digital and analog signals at pin IS. These signals are called SENSE. In case the diagnostic is disabled via DEN, pin IS becomes high impedance. In case DEN is activated, the SENSE of the channel X is enabled/disabled via associated pin DSEL. Table 7 gives the truth table. Table 7 DEN 0 1 1 Diagnostic Truth Table DSEL don't care 0 1 IS Z Sense output 0 IIS(0) Sense output 1 IIS(1) 7.1 IS Pin The BTS5180-2EKA provides a SENSE current written IIS at pin IS. As long as no "hard" failure mode occurs (short circuit to GND / current limitation / overtemperature / excessive dynamic temperature increase or open load at OFF) a proportional signal to the load current (ratio kILIS = IL / IIS) is provided. The complete IS pin and diagnostic mechanism is described on Figure 20. The accuracy of the SENSE depends on temperature and load current. The IS pin multiplexes the current IIS(0) and IIS(1), via the pin DSEL. Thanks to this multiplexing, the matching between kILISCHANNEL0 and kILISCHANNEL1 is optimized. Due to the ESD protection, in connection to VS, it is not recommended to share the IS pin with other devices if these devices are using another battery feed. The consequence is that the unsupplied device would be fed via the IS pin of the supplied device. Vs IIS0 = IL0 / kILIS IIS1 = IL1 / kILIS IIS(FAULT) ZIS(AZ) 0 1 IS DEN DSEL Figure 20 FAULT 0 1 Sense schematic.svg Diagnostic Block Diagram Data Sheet PROFETTM+ 12V 27 Rev. 2.0, 2010-08-02 BTS5180-2EKA Diagnostic Functions 7.2 SENSE Signal in Different Operating Modes Table 8 gives a quick reference for the state of the IS pin during device operation. Table 8 Sense Signal, Function of Operation Mode Input level Channel X OFF DEN1) H Output Level Diagnostic Output Z ~ GND Z Z Z Z Operation Mode Normal operation Short circuit to GND Overtemperature Short circuit to VS Open Load Inverse current Normal operation Current limitation Short circuit to GND Overtemperature TJ(SW) event Short circuit to VS Open Load Inverse current Underload Don't care 1) 2) 3) 4) 5) ON VS < VOL(OFF) > VOL(OFF)2) ~ VINV ~ VS < VS ~ GND Z IIS(FAULT) Z IIS(FAULT) IIS(FAULT) IIS = IL / kILIS IIS(FAULT) IIS(FAULT) IIS(FAULT) IIS < IL / kILIS IIS < IIS(OL) IIS < IIS(OL)4) IIS(OL) < IIS < IL(nom) / kILIS Z VS ~ VS3) ~ VINV ~ VS5) Don't care L Don't care The table doesn't indicate but it is assumed that the appropriate channel is selected via the DSEL pin. With additional pull-up resistor. The output current has to be smaller than IL(OL). After maximum tINV. The output current has to be higher than IL(OL). Data Sheet PROFETTM+ 12V 28 Rev. 2.0, 2010-08-02 BTS5180-2EKA Diagnostic Functions 7.3 SENSE Signal in the Nominal Current Range Figure 21 and Figure 22 show the current sense as a function of the load current in the power DMOS. Usually, a pull-down resistor RIS is connected to the IS pin. This resistor has to be higher than 560 to limit the power losses in the sense circuitry. A typical value is 1.2 k. The blue curve represents the ideal SENSE, assuming an ideal kILIS factor value. The red curves show the accuracy the device provides across full temperature range, at a defined current. 6.0 5.0 kilis4 IIS = IL KILIS ideal 4.0 I IS [m A] 3.0 K ilis3 Kilis1 Kilis2 2.0 1.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 kilis BTS5180 3.0 I L [A] Figure 21 Current Sense for Nominal Load 7.3.1 SENSE Signal Variation as a Function of Temperature and Load Current In some applications a better accuracy is required around half the nominal current IL(NOM). To achieve this accuracy requirement, a calibration on the application is possible. To avoid multiple calibration points at different load and temperature conditions, the BTS5180-2EKA allows limited derating of the kILIS value, at nominal load current (IL3; TJ = +25 C). This derating is described by the parameter kILIS. Figure 22 shows the behavior of the SENSE current, assuming one calibration point at nominal load at +25 C. The blue line indicates the ideal kILIS ratio. The green lines indicate the derating on the parameter across temperature and voltage, assuming one calibration point at nominal temperature and nominal battery voltage. The red lines indicate the kILIS accuracy without calibration. Data Sheet PROFETTM+ 12V 29 Rev. 2.0, 2010-08-02 BTS5180-2EKA Diagnostic Functions 900 800 700 Calibration point 600 k ilis 500 400 300 200 0.0 1.0 2.0 3.0 kilis BTS 5180 I L [A] Figure 22 Improved SENSE Accuracy with One Calibration Point 7.3.2 SENSE Signal Timing Figure 23 shows the timing during settling and disabling of the SENSE. VINx t IL t ONx 90% of IL static t OFFx t ONx VDEN t IIS t sIS(ON) 90% of IIS static tsIS(LC) t sIS(OFF) t sIS(ON_DEN) t tsIS(chC) VDSEL t t VINy t I Ly t ONy t current sense settling disabling time.vsd Figure 23 SENSE Settling / Disabling Timing 30 Rev. 2.0, 2010-08-02 Data Sheet PROFETTM+ 12V BTS5180-2EKA Diagnostic Functions 7.3.3 SENSE Signal in Open Load 7.3.3.1 Open Load in ON Diagnostic If the channel is ON, a leakage current can still flow through an open load, for example due to humidity. The parameter IL(OL) gives the threshold of recognition for this leakage current. If the current IL flowing out the power DMOS is below this value, the device recognizes a failure, if the DEN (and DSEL) is selected. In that case, the SENSE current is below IIS(OL). Otherwise, the minimum SENSE current is given above parameter IIS(OL). Figure 24 shows the SENSE current behavior in this area. The red curve shows a typical product curve. The blue curve shows the ideal kILIS ratio. I IS IIS(OL) IL IL(OL) Sense for OL .vsd Figure 24 Current Sense Ratio for Low Currents 7.3.3.2 Open Load in OFF Diagnostic For open load diagnosis in OFF-state, an external output pull-up resistor (ROL) is recommended. For the calculation of pull-up resistor value, the leakage currents and the open load threshold voltage VOL(OFF) have to be taken into account. Figure 25 gives a sketch of the situation. Ileakage defines the leakage current in the complete system, including IL(OFF) (see Chapter 5.5) and external leakages, e.g, due to humidity, corrosion, etc.... in the application. To reduce the stand-by current of the system, an open load resistor switch SOL is recommended. If the channel x is OFF, the output is no longer pulled down by the load and VOUT voltage rises to nearly VS. This is recognized by the device as an open load. The voltage threshold is given by VOL(OFF). In that case, the SENSE signal is switched to the IIS(FAULT). An additional RPD resistor can be used to pull VOUT to 0V. Otherwise, the OUT pin is floating. This resistor can be used as well for short circuit to battery detection, see Chapter 7.3.4. Data Sheet PROFETTM+ 12V 31 Rev. 2.0, 2010-08-02 BTS5180-2EKA Diagnostic Functions Vbat SOL VS IIS(FAULT) ROL OL comp. OUT IS ILOFF GND Ileakage RIS ZGND VOL(OFF) RPD Rleakage Open Load in OFF.svg Figure 25 Open Load Detection in OFF Electrical Equivalent Circuit 7.3.3.3 Open Load Diagnostic Timing Figure 26 shows the timing during either Open Load in ON or OFF condition when the DEN pin is HIGH. Please note that a delay tsIS(FAULT_OL_OFF) has to be respected after the falling edge of the input, when applying an open load in OFF diagnosis request, otherwise the diagnosis can be wrong. Load is present VIN Open load VOUT VS-VOL(OFF) RDS(ON) x IL t shutdown with load t IOUT IIS 90% of IIIS(FAULT) static tsIS(FAULT_OL_OFF) tsIS(LC) t Error Settling Disabling Time.vsd t Figure 26 SENSE Signal in Open Load Timing Data Sheet PROFETTM+ 12V 32 Rev. 2.0, 2010-08-02 BTS5180-2EKA Diagnostic Functions 7.3.4 SENSE Signal with OUT in Short Circuit to VS In case of a short circuit between the OUTput-pin and the VS pin, all or portion (depending on the short circuit impedance) of the load current will flow through the short circuit. As a result, a lower current compared to the normal operation will flow through the DMOS of the BTS5180-2EKA, which can be recognized at the SENSE signal. The open load at OFF detection circuitry can also be used to distinguish a short circuit to VS. In that case, an external resistor to ground RSC_VS is required. Figure 27 gives a sketch of the situation. Vbat VS IIS(FAULT) OL comp. VBAT IS OUT GND VOL(OFF) RIS ZGND RSC_VS Short circuit to Vs.svg Figure 27 Short Circuit to Battery Detection in OFF Electrical Equivalent Circuit 7.3.5 SENSE Signal in Case of Overload An overload condition is defined by a current flowing out of the DMOS reaching the current limitation and / or the absolute dynamic temperature swing TJ(SW) is reached, and / or the junction temperature reaches the thermal shutdown temperature TJ(SC). Please refer to Chapter 6.5 for details. In that case, the SENSE signal given is by IIS(FAULT) when the diagnostic is selected. The device has a thermal restart behavior, such that when the overtemperature or the exceed dynamic temperature condition has disappeared, the DMOS is reactivated if the IN is still at logical level one. If the DEN pin is activated, and DSEL pin is selected to the correct channel, SENSE is not toggling with the restart mechanism and remains to IIS(FAULT). 7.3.6 SENSE Signal in Case of Inverse Current In the case of inverse current, the sense signal of the affected channel will indicate open load in OFF state and indicate open load in ON state. The unaffected channel indicates normal behavior as long as the IINV current is not exceeding the maximum value specified in Chapter 5.4. Data Sheet PROFETTM+ 12V 33 Rev. 2.0, 2010-08-02 BTS5180-2EKA Diagnostic Functions 7.4 Electrical Characteristics Diagnostic Function Table 9 Electrical Characteristics: Diagnostics VS = 8 V to 18 V, TJ = -40C to +150C (unless otherwise specified). Typical values are given at VS = 13.5 V, TJ = 25 C Parameter Symbol Min. Load Condition Threshold for Diagnostic Open load detection threshold in OFF state Open load detection threshold in ON state Values Typ. - Max. 6 Unit Note / Test Condition V 1) Number VS - VOL(OFF) 4 VIN = 0 V VDEN = 4.5 V See Figure 26 P_7.5.1 IL(OL) 5 - 30 mA VIN = VDEN = 4.5 V IIS(OL) = 22 A See Figure 24 See Figure 46 P_7.5.2 Sense Pin IS pin leakage current when sense is disabled Sense signal saturation voltage IIS_(DIS) - - 1 A 1) VS - VIS (RANGE) 0 - 3 V VDEN = 0 V IL = IL4 = 2 A 3) VIN = 0 V VOUT = VS > 10 V VDEN = 4.5 V IIS = 6 mA See Figure 47 VIN = 4.5 V P_7.5.4 P_7.5.6 Sense signal maximum current in fault condition IIS(FAULT) 6 15 35 mA VIS = VIN = VDSEL = 0 V P_7.5.7 VOUT = VS > 10 V VDEN = 4.5 V See Figure 20 See Figure 48 Sense pin maximum voltage VIS(AZ) 41 47 53 V IIS = 5 mA See Figure 20 P_7.5.3 Current Sense Ratio Signal in the Nominal Area, Stable Load Current Condition Current sense ratio IL0 = 50 mA Current sense ratio IL1 = 0.25 A Current sense ratio kILIS0 kILIS1 kILIS2 kILIS3 -50 -34 -13 -9 -8 -8 550 550 550 550 550 0 +50 +34 +13 +9 +8 +8 % % % % % % VIN = 4.5 V VDEN = 4.5 V See Figure 21 P_7.5.8 P_7.5.9 P_7.5.10 P_7.5.11 P_7.5.12 TJ = -40 C; 150 C IL2 = 0.5 A Current sense ratio IL3 = 1 A Current sense ratio kILIS4 IL4 = 2 A kILIS derating with current and kILIS temperature Diagnostic Timing in Normal Condition 3) kILIS3 versus kILIS2 See Figure 22 P_7.5.17 Data Sheet PROFETTM+ 12V 34 Rev. 2.0, 2010-08-02 BTS5180-2EKA Diagnostic Functions Table 9 Electrical Characteristics: Diagnostics (cont'd) VS = 8 V to 18 V, TJ = -40C to +150C (unless otherwise specified). Typical values are given at VS = 13.5 V, TJ = 25 C Parameter Symbol Min. Current sense settling time to tsIS(ON) kILIS function stable after positive input slope on both INput and DEN 0 Values Typ. - Max. 250 Unit Note / Test Condition s Number P_7.5.18 VDEN = VIN = 0 to 4.5 V VS = 13.5 V RIS = 1.2 k CSENSE < 100 pF IL = IL3 = 1 A See Figure 23 1) 3) Current sense settling time with load current stable and transition of the DEN tsIS(ON_DEN) 0 - 20 s VIN = 4.5 V VDEN = 0 to 4.5 V RIS = 1.2 k CSENSE < 100 pF IL = IL3 = 1 A See Figure 23 1) P_7.5.19 Current sense settling time to tsIS(LC) IIS stable after positive input slope on current load 0 - 20 s VIN = 4.5 V VDEN = 4.5 V RIS = 1.2 k CSENSE < 100 pF IL = IL2 = 0.5 A to IL = IL3 = 1 A See Figure 23 P_7.5.20 Diagnostic Timing in Open Load Condition Current sense settling time to tsIS(FAULT_OL_ 0 IIS stable for open load OFF) detection in OFF state - 150 s 1) VIN = 0V VDEN = 0 to 4.5 V RIS = 1.2 k CSENSE < 100 pF VOUT = VS = 13.5 V See Figure 26 P_7.5.22 Diagnostic Timing in Overload Condition Current sense settling time to tsIS(FAULT) IIS stable for overload detection 0 - 250 s VIN = VDEN = 0 to 4.5 V RIS = 1.2 k CSENSE < 100 pF VDS = 5 V See Figure 19 3) 1) 2) P_7.5.24 Current sense over temperature blanking time tsIS(OT_blank) - 350 - s VIN = VDEN = 4.5 V RIS = 1.2 k CSENSE < 100 pF VDS = 5 V to 0 V See Figure 19 P_7.5.32 Data Sheet PROFETTM+ 12V 35 Rev. 2.0, 2010-08-02 BTS5180-2EKA Diagnostic Functions Table 9 Electrical Characteristics: Diagnostics (cont'd) VS = 8 V to 18 V, TJ = -40C to +150C (unless otherwise specified). Typical values are given at VS = 13.5 V, TJ = 25 C Parameter Diagnostic disable time DEN transition to IIS < 50% IL /kILIS Symbol Min. Values Typ. - Max. 30 0 Unit Note / Test Condition s 1) Number P_7.5.25 tsIS(OFF) VIN = 4.5 V VDEN = 4.5 V to 0 V RIS = 1.2 k CSENSE < 100 pF IL = IL3 = 1 A See Figure 23 Current sense settling time from one channel to another tsIS(ChC) 0 - 20 s VIN0 = VIN1 = 4.5 V VDEN = 4.5 V VDSEL = 0 to 4.5 V RIS = 1.2 k CSENSE < 100 pF IL(OUT0) = IL3 = 1 A IL(OUT1) = IL2 = 0.5 A See Figure 23 P_7.5.26 1) DSEL pin select channel 0 only. 2) Test at TJ = -40C only 3) Not subject to production test, specified by design Data Sheet PROFETTM+ 12V 36 Rev. 2.0, 2010-08-02 BTS5180-2EKA Input Pins 8 8.1 Input Pins Input Circuitry The input circuitry is compatible with 3.3 and 5 V microcontrollers. The concept of the input pin is to react to voltage thresholds. An implemented Schmidt trigger avoids any undefined state if the voltage on the input pin is slowly increasing or decreasing. The output is either OFF or ON but cannot be in a linear or undefined state. The input circuitry is compatible with PWM applications. Figure 28 shows the electrical equivalent input circuitry. In case the pin is not needed, it must be left opened, or must be connected to device ground (and not module ground) via a 4.7k input resistor. IN GND Figure 28 Input Pin Circuitry Input circuitry.vsd 8.2 DEN / DSEL Pin The DEN / DSEL pins enable and disable the diagnostic functionality of the device. The pins have the same structure as the Input pins, please refer to Figure 28. 8.3 Input Pin Voltage The IN, DSEL and DEN use a comparator with hysteresis. The switching ON / OFF takes place in a defined region, set by the thresholds VIN(L) Max. and VIN(H) Min. The exact value where the ON and OFF take place are unknown and depends on the process, as well as the temperature. To avoid cross talk and parasitic turn ON and OFF, a hysteresis is implemented. This ensures a certain immunity to noise. Data Sheet PROFETTM+ 12V 37 Rev. 2.0, 2010-08-02 BTS5180-2EKA Input Pins 8.4 Electrical Characteristics Table 10 Electrical Characteristics: Input Pins VS = 8 V to 18 V, TJ = -40C to +150C (unless otherwise specified). Typical values are given at VS = 13.5 V, TJ = 25 C Parameter INput Pins Characteristics Low level input voltage range VIN(L) High level input voltage range VIN(H) Input voltage hysteresis Low level input current High level input current DEN Pin Low level input voltage range VDEN(L) High level input voltage range VDEN(H) Input voltage hysteresis Low level input current High level input current DSEL Pin Low level input voltage range VDSEL(L) High level input voltage range VDSEL(H) Input voltage hysteresis Low level input current High level input current -0.3 2 - 1 2 - - 250 10 10 0.8 6 - 25 25 V V mV A A - - 1) Symbol Min. -0.3 2 - 1 2 Values Typ. - - 250 10 10 Max. 0.8 6 - 25 25 Unit Note / Test Condition See Figure 49 See Figure 50 1) Number V V mV A A P_8.4.1 P_8.4.2 P_8.4.3 P_8.4.4 P_8.4.5 VIN(HYS) IIN(L) IIN(H) See Figure 51 VIN = 0.8 V VIN = 5.5 V See Figure 52 -0.3 2 - 1 2 - - 250 10 10 0.8 6 - 25 25 V V mV A A - - 1) P_8.4.6 P_8.4.7 P_8.4.8 P_8.4.9 P_8.4.10 P_8.4.11 P_8.4.12 P_8.4.13 P_8.4.14 P_8.4.15 VDEN(HYS) IDEN(L) IDEN(H) VDEN = 0.8 V VDEN = 5.5 V VDSEL(HYS) IDSEL(L) IDSEL(H) VDSEL = 0.8 V VDSEL = 5.5 V 1) Not subject to production test, specified by design Data Sheet PROFETTM+ 12V 38 Rev. 2.0, 2010-08-02 BTS5180-2EKA Characterization Results 9 Characterization Results The characterization have been performed on 3 lots, with 3 devices each. Characterization have been performed at 8 V, 13.5 V and 18 V, from -40C to 160C. When no dependency to voltage is seen, only one curve (13,5V) is sketched. 9.1 General Product Characteristics 9.1.1 P_4.2.3 Minimum Functional Supply Voltage 5 VS(OP)_MIN (V) 4,6 4,2 3,8 -40 0 40 80 120 160 Junction Temp (C) minimum functional supply.vsd Figure 29 Minimum Functional Supply Voltage VS(OP)_MIN = f(TJ) 9.1.2 P_4.2.4 Undervoltage Shutdown 4 3,75 VS(UV) (V) 3,5 3,25 3 -40 0 40 80 120 160 Junction Temp (C) Undervoltage_shutdown.vsd Figure 30 Undervoltage Threshold VS(UV) = f(TJ) Data Sheet PROFETTM+ 12V 39 Rev. 2.0, 2010-08-02 BTS5180-2EKA Characterization Results 9.1.3 P_4.2.5 Current Consumption One Channel active 6 I_GND1 @ 8V I_GND1 @ 13.5V I_GND1 @ 18V I_GND1 (m A) 3 0 -40 0 40 80 120 160 Junction Temp (C) Current consumption one channel active.vsd Figure 31 Current Consumption for Whole Device with Load. One Channel Active IGND_1 = f(TJ;VS) 9.1.4 P_4.2.6 Current Consumption Two Channels active 9 I_GND2 @ 8V I_GND2 @ 13.5V I_GND2 @ 18V I_GND2 (m A) 6 3 0 -40 0 40 80 120 160 Junction Temp (C) Current consumption two channel active.vsd Figure 32 Current Consumption for Whole Device with Load. Two Channels Active IGND_2 = f(TJ;VS) 9.1.5 Standby Current for Whole Device with Load P_4.2.7, P_4.2.10 IS(OFF) @ 18V IS(OFF) @ 13.5V IS(OFF) @ 8V 4 IS (OFF) (A) 2 0 -40 0 40 80 120 160 Junction Tem p (C) Figure 33 Standby Current for Whole Device with Load. IS(OFF) = f(TJ;VS) 40 Rev. 2.0, 2010-08-02 Data Sheet PROFETTM+ 12V BTS5180-2EKA Characterization Results 9.2 Power Stage 9.2.1 P_5.5.4 Output Voltage Drop Limitation at Low Load Current 13 VDS(NL) (mV) 11 9 7 -40 0 40 80 120 160 Junction Temp (C) Output Voltage drop limitation at low load current.vsd Figure 34 Output Voltage Drop Limitation at Low Load Current VDS(NL) = f(TJ;VS) ; IL = IL(0) = 30mA 9.2.2 P_5.5.5 Drain to Source Clamp Voltage 52 VDS(AZ) (V) 48 44 40 -40 0 40 80 120 160 Junction Temp (C) Drain to source clamp voltage.vsd Figure 35 Drain to Source Clamp Voltage VDS(AZ) = f(TJ) Data Sheet PROFETTM+ 12V 41 Rev. 2.0, 2010-08-02 BTS5180-2EKA Characterization Results 9.2.3 P_5.5.11 Slew Rate at Turn ON 0,5 dV/dt_ON @ 8V dV/dt_ON @ 13.5V dV/dt_ON @ 18V dV/dt_ON (V/s) 0,3 0,1 -40 0 40 80 120 160 Junction Temp (C) dV_dt_ON.vsd Figure 36 Slew Rate at Turn ON dV/dtON = f(TJ;VS), RL = 12 9.2.4 P_5.5.12 Slew Rate at Turn OFF 0,5 dV/dt_OFF @ 8V dV/dt_OFF @ 13.5V dV/dt_OFF @ 18V dV/dt_OFF (V/s) 0,3 0,1 -40 0 40 80 120 160 Junction Temp (C) dV_dt_OFF.vsd Figure 37 Slew Rate at Turn OFF - dV/dtOFF = f(TJ;VS), RL = 12 9.2.5 P_5.5.14 Turn ON 230 tON 90%@18V tON 90%@13,5V tON 90%@8V t_ON 90% (s) 130 30 -40 0 40 80 120 160 Junction Temp (C) tON_90.vsd Figure 38 Turn ON tON = f(TJ;VS), RL = 12 42 Rev. 2.0, 2010-08-02 Data Sheet PROFETTM+ 12V BTS5180-2EKA Characterization Results 9.2.6 P_5.5.11 Turn OFF 230 tOFF 10%@18V tOFF 10%@13,5V tOFF 10%@8V t_OFF 10% (s) 130 30 -40 0 40 80 120 160 Junction Temp (C) tOFF_90.vsd Figure 39 Turn OFF tOFF = f(TJ;VS), RL = 12 9.2.7 P_5.5.16 Turn ON / OFF matching 50 delta_t_SW @ 8V delta_t_SW @ 13.5V delta_t_SW @ 18V 25 delta t SW (s) 0 -25 -50 -40 0 40 80 120 160 Junction Temp (C) delta_t_SW_OFF_ON.vsd Figure 40 Turn ON / OFF matching tSW = f(TJ;VS), RL = 12 Data Sheet PROFETTM+ 12V 43 Rev. 2.0, 2010-08-02 BTS5180-2EKA Characterization Results 9.2.8 P_5.5.19 Switch ON Energy 750 S w itc h O N energy @ 18V S w itc h O N energy @ 13,5V S w itc h O N energy @ 8V 500 E_ON (J) 250 0 -40 0 40 80 120 160 J u n c tio n T em p (C ) Figure 41 Switch ON Energy EON = f(TJ;VS), RL = 12 9.2.9 P_5.5.20 Switch OFF Energy 75 0 S w itc h O N energy @ 18V S w itc h O N energy @ 13,5V S w itc h O N energy @ 8V 50 0 E_ON (J) 25 0 0 -4 0 0 40 80 120 160 J u n ctio n T e m p (C ) Figure 42 Switch OFF Energy EOFF = f(TJ;VS), RL = 12 Data Sheet PROFETTM+ 12V 44 Rev. 2.0, 2010-08-02 BTS5180-2EKA Characterization Results 9.3 Protection Functions 9.3.1 P_6.6.4 Overload Condition in the Low Voltage Area 20 IL(SC)_5V @ 8V IL(SC)_5V @ 13.5V IL(SC)_5V @ 18V 15 IL5(SC) (V) 10 5 0 -40 0 40 80 120 160 Junction Tem p (C) Figure 43 Overload Condition in the Low Voltage Area IL5(SC) = f(TJ;VS) 9.3.2 P_6.6.7 Overload Condition in the High Voltage Area 10 IL28(SC) (V) 5 0 -40 0 40 80 120 160 Junction Tem p (C) Figure 44 Overload Condition in the High Voltage Area IL28(SC) = f(TJ;VS) Data Sheet PROFETTM+ 12V 45 Rev. 2.0, 2010-08-02 BTS5180-2EKA Characterization Results 9.4 Diagnostic Mechanism 9.4.1 Current Sense at no Load 2,5 2 I_IS @ IL = 0mA (A) 1,5 1 0,5 0 -40 0 40 80 120 160 Junction Temp (C) Current_sense_0mA.vsd Figure 45 Current Sense at no Load IIS = f(TJ;VS), IL = 0 9.4.2 P_7.5.2 Open Load Detection Threshold in ON State Figure 46 Open Load Detection ON State Threshold IL(OL) = f(TJ;VS) Data Sheet PROFETTM+ 12V 46 Rev. 2.0, 2010-08-02 BTS5180-2EKA Characterization Results 9.4.3 P_7.5.3 Sense Signal Maximum Voltage 3 VIS _R ANGE @ 8V VIS _R ANGE @ 13.5V VIS _R ANGE @ 18V IS _RANGE (V) 2 V 1 -40 0 40 80 120 160 Junction T em p (C) Figure 47 Sense Signal Maximum Voltage VS - VIS(RANGE) =f(TJ;VS) 9.4.4 P_7.5.7 Sense Signal maximum Current S -V IIS_FAULT @ 8V 36 IIS_FAULT @ 13.5V IIS_FAULT @ 18V IIS_FAULT (mA) 26 16 6 -40 0 40 80 120 160 Junction Temp (C) IIS_FAULT.vsd Figure 48 Sense Signal Maximum Current in Fault Condition IIS(FAULT) = f(TJ;VS) Data Sheet PROFETTM+ 12V 47 Rev. 2.0, 2010-08-02 BTS5180-2EKA Characterization Results 9.5 Input Pins 9.5.1 P_8.4.1 Input Voltage Threshold ON to OFF 2 I_IN(L) @ 8V I_IN(L) @ 13.5V I_IN(L) @ 18V 1,5 V_INH(L) (V) 1 0,5 0 -40 0 40 80 120 160 Junction Temp (C) Input_pin_low_voltage.vsd Figure 49 Input Voltage Threshold VIN(L) = f(TJ;VS) 9.5.2 P_8.4.2 Input Voltage Threshold OFF to ON 2 1,5 V_INH(H) (V) 1 0,5 0 -40 0 40 80 120 160 Junction Temp (C) Input_pin_high_voltage.vsd Figure 50 Input Voltage Threshold VIN(H) = f(TJ;VS) Data Sheet PROFETTM+ 12V 48 Rev. 2.0, 2010-08-02 BTS5180-2EKA Characterization Results 9.5.3 P_8.4.3 Input Voltage Hysteresis 400 V_IN(HYS) @ 8V V_IN(HYS) 13.5V V_IN(HYS) @ 18V 300 V_IN(HYS) (mV) 200 100 0 -40 0 40 80 120 160 Junction Temp (C) Input_pin_voltage_hysteresis.vsd Figure 51 Input Voltage Hysteresis VIN(HYS) = f(TJ;VS) 9.5.4 P_8.4.5 Input Current High Level 25 20 I_INH(H) (A) 15 10 5 0 -40 0 40 80 120 160 Junction Temp (C) Input_pin_high_current.vsd Figure 52 Input Current High Level IIN(H) = f(TJ;VS) Data Sheet PROFETTM+ 12V 49 Rev. 2.0, 2010-08-02 BTS5180-2EKA Application Information 10 Application Information Note: The following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. VBAT R/L cable T1 CVS Z2 VDD ROL Vdd OUT OUT OUT OUT RIN Vs IN0 IN1 RDEN R/L cable OUT0 COUT0 RPD RIN DEN DSEL RDSEL Micro controller R/L cable OUT1 A/D CSENSE RA/D RSENSE IS GND Z1 Vss RIS D RGND RPD COUT1 Application example.svg Figure 53 Application Diagram with BTS5180-2EKA Note: This is a very simplified example of an application circuit. The function must be verified in the real application. Table 11 Reference Bill of Material Value 4.7 k 4.7 k 47 k 4.7 k 1.2 k Purpose Protection of the micro controller during overvoltage, reverse polarity Guarantee BTS5180-2EKA channels OFF during loss of ground Protection of the micro controller during overvoltage, reverse polarity Guarantee BTS5180-2EKA channels OFF during loss of ground Polarization of the output Improve BTS5180-2EKA immunity to electromagnetic noise Protection of the micro controller during overvoltage, reverse polarity Guarantee BTS5180-2EKA channels OFF during loss of ground Sense resistor RIN RDEN RPD RDSEL RIS Data Sheet PROFETTM+ 12V 50 Rev. 2.0, 2010-08-02 BTS5180-2EKA Application Information Table 11 Reference Bill of Material (cont'd) Value 4.7 k 1.5 k 4.7 k BAS21 1 k 36 V Zener diode BC 807 100 pF 100 nF 4.7 nF 4.7 nF Purpose Overvoltage, reverse polarity, loss of ground. Value to be tuned with micro controller specification. Ensure polarization of the BTS5180-2EKA output during open load in OFF diagnostic Protection of the micro controller during overvoltage, reverse polarity Protection of the BTS5180-2EKA during reverse polarity To keep the device GND at a stable potential during clamping Protection of the device during overvoltage Switch the battery voltage for open load in OFF diagnostic Sense signal filtering Filtering of the voltage spikes on the battery line Protection of the BTS5180-2EKA during ESD and BCI Protection of the BTS5180-2EKA during ESD and BCI RSENSE ROL RA/D D RGND Z1 Z2 T1 CSENSE CVS COUT0 COUT1 7 V Zener diode Protection of the micro controller during overvoltage 10.1 * * * Further Application Information Please contact us to get the pin FMEA Existing App. Notes For further information you may visit http://www.infineon.com/profet Data Sheet PROFETTM+ 12V 51 Rev. 2.0, 2010-08-02 BTS5180-2EKA Package Outlines 11 Package Outlines 0.35 x 45 3.9 0.11) Stand Off (1.47) 0.1 C D 2x 1.7 MAX. 8 MAX. 8 MAX. 0...8 0.2 -0.1 0.19 +0.06 0.64 0.25 6 0.2 0.1+0 -0.1 1.27 0.410.09 2) 0...8 0.2 M C C A-B D 14x 0.08 C Seating Plane 8 MAX. M D 0.2 D Bottom View A 14 8 1 6.4 0.1 7 1 7 14 8 B 8.65 0.1 Index Marking 0.1 C A-B 2x 1) Does not include plastic or metal protrusion of 0.15 max. per side 2) Does not include dambar protrusion of 0.13 max. 3) JEDEC reference MS-012 variation BB 2.65 0.1 GPS01207 Figure 54 PG-DSO-14-40 EP (Plastic Dual Small Outline Package) (RoHS-Compliant) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). Data Sheet PROFETTM+ 12V 52 Rev. 2.0, 2010-08-02 BTS5180-2EKA Revision History 12 Revision History Version 2.0 Date 2010-05-31 Parameter Changes Creation of the Data Sheet Data Sheet PROFETTM+ 12V 53 Rev. 2.0, 2010-08-02 Edition 2010-08-02 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. |
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